Abstract
A surface restricted transient grating technique has been demonstrated as a sensitive probe of the ultrafast dynamics of surface reactions. Studies of interfacial electron transfer processes at single crystal n‐TiO2 (001) surfaces have shown that electron transfer is occurring to thermalized hole vacancies at the surface valence band edge. The main competing pathway is shown to be surface trap recombination and not auger recombination, even at high carrier concentrations. Evidence is given for OH in the Helmholtz layer as the initial hole carrier acceptor.
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