Abstract
We have found that a picosecond time relaxation of photoexcited carriers appears after an optical illumination in glow discharge hydrogenated amorphous silicon. The origin of this rapid relaxation is qualitatively explained by the relaxation of excited carriers to increased shallow localized states after the optical illumination. The experimental results have been analyzed by a multiple trapping mechanism taking into account shallow and deep localized states.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
