Pickup impact on high-voltage multifinger LDMOS–SCR with low trigger voltage and high failure current

Abstract

The impact of inserting P+ pickup on high-voltage multi-finger laterally diffused metal–oxide–semiconductor–silicon-controlled rectifier (LDMOS–SCR) has been studied in this article. Four-finger LDMOS–SCR structures with finger length of 50μm using 0.5μm 18V complementarily diffused metal oxide semiconductor (CDMOS) process were fabricated and tested. Theoretical analysis is carried out to make detailed comparisons between LDMOS–SCR with and without P+ pickup. It verifies that the multi-finger LDMOS–SCR with P+ pickup has greater electrostatic discharge (ESD) robustness and effectiveness. Furthermore, transmission line pulse (TLP) test has been done and the results show that the trigger voltage (Vt1) of the LDMOS–SCR with P+ pickup remarkably decreases from 46.19 to 35.39V and the second breakdown current (It2) effectively increases from 8.13 to 10.08A.