Abstract
Large performance gap between the performance visible and deep ultraviolet light emitting diodes (DUV LEDs) is primarily attributed to material properties of high aluminum content group III-nitride semiconductor alloys used for DUV LEDs. For current state of art DUV LED devices the external quantum efficiencies (EQE) - ranges from 2% to 10%. A lower DUV LED efficiency is also due to poor transparency of semiconductor layers to UV light, poor UV light reflectivity of n-and p- contacts, low conductivity of semiconductor heterostructure, and high contact-to-semiconductor layer resistance. In this paper we discuss and compare physics of DUV LEDs and discuss the design of the next generation of DUV LEDs.
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