Abstract
Elementary surface processes occurring during vapor-phase epitaxy of the III–V compounds are studied using experimental and calculation methods. The calculated vapor-phase composition in the reactor and the adsorptionlayer composition on the growth surface were compared with the experimental data on the surface structure and electrophysical properties of GaAs layers doped with Zn and Te. This allowed the characteristic quantities of surface processes such as average diffusion length and surface diffusion coefficient for host-material (for GaAs, InAs, and InP) and impurity (Zn, Te) atoms to be estimated.
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