Abstract
Defect distribution and Fermi-level depinning at metal/Ge interfaces are studied based on the first-principles calculations. It is shown that metal induced gap states (MIGS) hybridize with defect electronic states and work to increase interface disorders. In addition, we show that Fermi-level pinning (FLP) is caused not only by MIGS but also by disorder induced gap states (DIGS), while the GeO2 and α-Sn interface layers block the MIGS penetration into Ge layers and break the FLP. The effects of dopant segregation and germanide/silicide metal electrodes on FL depinning are also discussed.
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