Physics-Based SPICE Modeling of Dynamic on-State Resistance of p-GaN HEMTs

Abstract

This letter introduces a new physics based SPICE modeling method for the dynamic on-state resistance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,dy</sub> ) of gallium nitride based p-type gate power high electron mobility transistors (p-GaN HEMTs). To describe the continuous variations of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,dy</sub> , a time-resolved electron mobility variation (Δ <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">μ</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) model is proposed. Physical parameters including activation energy and voltage acceleration factor of traps in p-GaN HEMTs are extracted as the model parameters. Then, to achieve the goal of simulating Ron,dy, the proposed Δμeff model is incorporated into the surface potential based advanced SPICE model for GaN HEMT (ASM-HEMT). Simulative results prove the proposed models can predict the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,dy</sub> induced power loss.