Abstract
A physics-based percolation model that relates defect generation and oxide breakdown is presented. The model is based on two elements: a compact model for the trap-assisted current through single and multiple trap paths and the statistical description of defect positions in these paths. This new percolation model overcomes the limitations of the standard geometrical implementation of the percolation model and is more easily linked to the experimental breakdown results in the ultra-thin oxide limit. This new picture reproduces all the important results of the traditional percolation model and is able to explain experimental results that the old model cannot even consider.
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