Abstract
The research presents AlGaN/GaN HEMTs device characterizations at different temperatures using physics-based numerical simulation. Industry standard simulation tool Silvaco ATLAS is used to characterize the various electronic properties of the device. An extensive theoretical overview is done to achieve the most comprehensive values for GaN and AlGaN properties, as discussed in the paper. This research is mainly focused on simulation of temperature dependent device performances as well as on some other material properties that are not well defined in ATLAS. Energy bandgap, density of states, saturation velocities, surface traps, polarization effect, carrier lifetime and mobility, permittivity, effective Richardson's constant, and donor and acceptor energy levels are considered as critical parameters for predicting temperature effect in ALGaN/GaN HEMT. Various aspects of device performance are analyzed at high temperature along with the different bias configurations.
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