Abstract
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.
Highlights
T HE reconfigurable field-effect transistor (RFET) technology that has been demonstrated in [1] gained attention, because of the application possibilities which differ from regular metal oxide semiconductor field-effect transistors (MOSFETs)
With the two gates of those devices, where one gate covers the source-channel sided and the other gate covers the drain-channel sided Schottky junction, the charge carrier injection at both contacts can be controlled individually, so one gate - the program gate (PG) - can be used to determine the polarity of the device, while the other gate - the control gate (CG) - controls the actual current flow like in regular MOSFET [1], [5]
In [6] we introduced the basics of a closed-form and physics-based compact model that fulfills the given conditions and is applicable to Schottky barrier field-effect transistors (SBFETs) and configured RFETs
Summary
T HE reconfigurable field-effect transistor (RFET) technology that has been demonstrated in [1] gained attention, because of the application possibilities which differ from regular metal oxide semiconductor field-effect transistors (MOSFETs) Those devices come with an additional gate, which is used to control the device’s polarity, leading to an increased device functionality, and can potentially reduce the complexity of electronic circuits [1]–[3]. In order to validate the compact model, based on the measurements from [7], Technology Computer-Aided Design (TCAD) simulations are done with TCAD Sentaurus [8] These simulations, that use the parameters from [9], are used to simulate the device under various bias conditions.
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