PHYSICS BASED ANALYTICAL MODELING OF NANOSCALE MULTIGATE MOSFETs

Abstract

Various physics based modeling schemes for multigate MOSFETs are presented. In all cases, the models are derived from an analysis of the device body electrostatics in terms of two- or three-dimensional Laplace's and Poisson's equations, where short-channel and scaling effects are implicitly accounted for. Thus a comprehensive modeling framework is derived for the subthreshold electrostatics of double-gate MOSFETs based on a conformal mapping analysis of the potential distribution in the device body arising from the inter-electrode capacitive coupling. This technique is also applied to the circular gate-all-around MOSFET by utilizing the symmetry properties of this device. For both these devices, the modeling is extended to include the strong inversion regime by a self-consistent procedure that simultaneously allows the calculation of the quasi-Fermi potential distribution, the drain current, and the intrinsic capacitances. In an alternative modeling framework, covering a wide range of multigate devices in a unified manner, the potential distribution is derived from a select set of isomorphic trial functions that reflect the geometry and symmetry properties of the devices. Modeling parameters used are self-consistently determined by imposing boundary conditions associated with Laplace's or Poisson's equation. Finally, the effects of quantum mechanical confinement are discussed for ultra thin body devices. The results of the modeling are in excellent agreement with numerical simulations.