Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

Abstract

Physics-based 3D simulations were conducted on a GaN high-electron-mobility transistor (HEMT) and a super-heterojunction field-effect transistor (SHJFET) to investigate the single event effect mechanism under heavy ion irradiation. Most of the single event transient current in HEMT was attributed to the punch-through effect in the bulk caused by the local increase in electrostatic potential. With improved E-field management and a more favorable potential profile to suppress source electron injection, the SHJFET had a 70% lower transient current peak value compared to the HEMT.