Abstract
AbstractWe describe physics and control of Si/SiGe heterointerfaces. A clear distinction will be made between the vertical and lateral effects of the Si/SiGe interface from the viewpoint of interface engineering. Ge surface segregation during nonequilibrium MBE growth and surfactant-mediated-growth are highlighted as prominent examples for the vertical effects while interface microroughness is addressed for the lateral effects. The influence of the interface effects on radiative recombination of indirect excitons is described in the context of SiGe-based optoelectronic applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
