Abstract
This paper reviews recent advances in our current level of understanding of the physics underlying transport and optical properties of Ge x Si 1-x /Si strained-layer heterostructures. Included are discussions of critical (maximum) layer thicknesses, effects of coherency strain on the bandgaps of both Si and Ge x Si 1-x and the influence of layer strains on the band alignments of Ge x Si 1-x /Si strained-layer heterostructures. Transport studies will center on the modulation doping results of both n and p type heterostructures. Indeed, these earlier transport studies provided essential information which led to an understanding of the band-alignment in these strained layer heterostructures. Recent measurements of the indirect bandgap of Ge x Si 1-x strained layers on
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