Abstract
Fe-doped TiO2 was here used as a semiconductor material for Dye-sensitized solar cells (DSSCs) to improve the solar energy conversion to electricity as compared to precursor TiO2. The physicochemical properties of Fe-doped TiO2 were clarified by different techniques such as X-ray diffractions, Transmission Electron Microscope, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, UV–vis Diffuse Reflectance Spectra, and Photoluminescence Spectra. The material resulted in a defective TiO2 with oxygen vacancies and Ti3+ along with Fe ions into the structure. The formation of superficial defects contributed to the prevention of electron-hole recombination, thereby enhancing the lifetime of the photoelectrons. The presence of defects was measured by the deconvolution of Ti 2p and O 1s, while the low recombination rate was calculated with the PL spectrum of the semiconductor. The higher lifetime of the e−/h+ pairs lead to a result with the efficiency of Fe–TiO2-based DSSC increased to 30% in comparison with undoped-TiO2-based DSSC.
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