Abstract
The physicochemical processes occurring in the structure of alkaline glass and at a silicon – glass interface with anodic bonding of the glass and silicon wafers were studied. The bonding of these materials is now widely used in industry in the development of sensitive elements of micromechanical sensors, such as pressure, acceleration, and other sensors. It is shown that in order to obtain a high-quality bond both the parameters of the technological process (for example, the applied voltage) and the structural features of the bonded parts (for example, the thickness of the glass wafers) can be varied.
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