Abstract

Schottky barrier capacitance techniques are used to characterize the deep-lying electron and hole trapping centres in the forbidden energy gap of n-type GaAs grown by VPE and LPE techniques. The activation energy, capture cross-section and the density of these centres are determined. It is shown that an electron trap at 0.70 eV below the lowest energy conduction band minimum and a hole trap at 0·64 eV above the valence band maximum are present in VPE and LPE GaAs, respectively. These trapping centres are associated with Ga vacancies in VPE GaAs and As vacancies in LPE GaAs.

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