Abstract
The chemical processes occurring during the interaction of carbon (diamond) with silicon are experimentally investigated. Thermal analysis of the interaction of diamond with silicon is carried out. This made it possible to determine the mechanism of the synthesis of silicon carbide and subsequent reaction sintering of diamond particles based on Turing’s reaction-diffusion process and the formation of a microstructure consisting of triple periodic surfaces of the minimal energy.
Highlights
The decisive role in the formation of the properties of substances is played by their chemical nature
Materials based on diamond and heterogeneous silicon carbide are of great practical interest among composites [1, 2]
The most effective and practical method is reaction sintering, which leads to the formation of a dense structure consisting of diamond particles and silicon carbide [3,4,5,6,7,8]
Summary
The decisive role in the formation of the properties of substances is played by their chemical nature. The stage is the dissolution of carbon (pyrocarbon) and graphite on the surface of the diamond, saturation of the silicon melt with them, and crystallization in the form of silicon carbide in the most favorable places in thermodynamic terms, i.e., on the surfaces of diamond particles (Fig. 2b) This process does not lead to a change in the center distances of the contacting spheres of diamond particles. The dissolution of graphite (carbon) on the surface of the diamond particles and the formation of silicon carbide begin at this temperature, accompanied by a large exothermic effect (the specific heat of the chemical reaction is –106.9 J/g). There are practically no pores in the material, which indicates a strong interfacial bond between diamond and silicon carbide
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