Physicochemical interaction at the MnSi1.71–1.75/Mo interface

Abstract

Diffusion processes at the interface between higher manganese silicide (HMS) MnSi1.71–1.75 and Mo at elevated temperatures have been studied by microstructural analysis and X-ray microanalysis. The results demonstrate the formation of a reaction diffusion zone at the HMS/metal interface. The compositions of the phases identified in intermediate layers are consistent with phase equilibria in the ternary system Mn-Mo-Si, and their electrical and thermal conductivity is high enough not to create an energy barrier in the contact zone with the semiconductor. The thermal expansion mismatch between the phases in contact may degrade the bonding between the layers.