Physico-Chemical Processes Induced by Electrical Breakdown and Discharge Responsible for Memory Effect in Krypton with < 10 ppm Nitrogen

Abstract

In order to analyze the processes induced by electrical breakdown and discharge responsible for memory effect in krypton-filled tube at low pressure, experimental data mean value of electrical breakdown time delay \(\bar{t}_{d}\) as a function of afterglow period τ (memory curve) was used. Analysis showed that in the 1 μs 30 s the concentration of N(4S) atoms decreases significantly so that the dominant role in initiation of breakdown is taken over by cosmic rays and natural radioactivity. The increase in discharge current leads to the decrease in \(\bar{t}_{d}\) in the 1 μs 7 ms due to the increase in probability for breakdown. It has also been show that exposure of krypton-filled tube to low dose of gamma ray irradiation as well as UV irradiation with wavelength higher than 300 nm leads to the decrease in \(\bar{t}_{d}\). This decrease occurs for τ > 7 ms, when N(4S) atoms play a dominant role in breakdown initiation.