Abstract

Systematic defects due to design-process interactions are a significant component of integrated circuit (IC) yield loss in nano-scale technologies. Test structures do not adequately represent the product in terms of feature diversity and feature volume, and therefore are unable to identify all the systematic defects that will affect a product over its manufacturing lifetime. This paper describes a comprehensive methodology that addresses the prevention and identification of systematic defects. For prevention, a method called RADAR (Rule Assessment of Defect-Affected Regions) has been developed for measuring the effectiveness of design-for-manufacturability (DFM) rules in preventing systematic defects that is based on volume diagnosis data. A second method called LASIC (Layout Analysis for Systematic Identification using Clustering), also based on volume diagnosis data, has been developed for identifying systematic defects that escape DFM. To validate RADAR and LASIC, a fast and accurate defect simulation framework called SLIDER (Simulation of Layout-Injected Defects for Electrical Responses) has been developed. SLIDER generates virtual failure data with known defect characteristics. Experiments involving two industrial chips and virtual failure data from SLIDER demonstrate the effectiveness of RADAR and LASIC.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.