Abstract

The resistive switching memories are in prosperity development on account of its simple structure and high performance. A primary problem of resistive switching memory reliability is discrete and random distribution of resistive switching parameters, which limits greatly the possible range of its digital memory application on account of uniformity of resistance parameters is poor and the distribution range is too large. But, from the other side, these random parameter distributions are eable be used to complete some computing tasks. Here, a random number generation is demonstrated with stochastic variation of Vset in a flexible threshold switching device by using the carbon nanotube and polyvinyl alcohol composite materials. Two reading voltages was applied to the two threshold switching devices, the electric potential of Vcin randomized either positive or negative in accordance with the cycle to cycle evolution of two threshold switching devices by the control of the voltage divider, which in return comes about a random bitstream after passing by the comparer. As well as, its transient characteristics have been illustrated for data security appilcation.

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