Physically Transient Artificial Neuron Based on Mg/Magnesium Oxide Threshold Switching Memristor

Abstract

Threshold switching (TS) devices have received significant interests for constructing high-density integrated and energy-efficient artificial neurons in neuromorphic computing. On the other hand, physically transient electronics that can vanish harmlessly after completing the assigned task have great potential for temporary biomedical devices and secure information systems. Therefore, the development of physically transient artificial neurons based on TS devices has the wide application prospects in biointegrated medical electronics and security neuromorphic computing. However, physically transient artificial neurons based on TS devices are still lacking. Here, a physically transient artificial neuron realized with a W/MgO/Mg/W memristor device is proposed. The transient device shows robust TS characteristics with fast switching speed and high switching endurance (105 circles). The key functions of a biological neuron were successfully emulated by the leaky integrate-and-fire (LIF) neuron implemented with this transient device. In addition, the device’s arrays on a poly (vinyl alcohol) (PVA) substrate can disintegrate completely when soaked in deionized (DI) water at room temperature (RT) for 40 min. These results demonstrate that physically transient artificial neurons pave the way for applications in secure neuromorphic computing, biointegrated electronics, and human–machine interfaces.