Abstract
We synthesize and analyze Ag-doped ZnO (SZO) nanowires (NWs) via avapor–liquid–solid mechanism in a physical vapor deposition. The process condition forthe SZO NW formation is optimized by adjusting the kinetic energy and theflux of the laser-ablated particles by hot-wall control. Electron microscopesensure excellent morphologies of the doped NWs obtained. We confirm p-typedoping effects, with low temperature photoluminescence used to trace theA0X peak. We realize diodes with all-ZnO-based p–n junctions ofSZO NWs and Ga-doped ZnO thin films, resulting in asymmetricI–V characteristics with the turn on voltage of 3.8 V.
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