Physically based design of a Class E power amplifier with non-linear transistor output capacitance

Abstract

A numerical method to find the optimal component values for Class E amplifiers with nonlinear parasitic transistor output capacitance is presented in this paper. Optimal component values for hyperabrupt junction capacitance with grading coefficient ranging from 0.5 to 0.9 are found and presented in easy-to-read plots. A design example of a 1 GHz Class E 1 W power amplifier using models from AMS 0.35 μm CMOS technology is presented to show the effectiveness of the method. (4 pages)