Abstract
AbstractThe two‐dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double‐pulse switching test circuit. The compact model has been established to model a 4500V‐1500A flat pack TOSHIBA IEGT. Copyright © 2004 John Wiley & Sons, Ltd.
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