Physical Solution to Electron Beam Defects During the Pumping Process of Gaas Semiconductor Plasma

Abstract

Increasing the life time of semiconductors during the excitation process is an important challenge and the results presented in the article can be used in determining the threshold of pumping process using an electron beam to avoid growing nonlinear waves which can deliver the energy through the material to produce defects1,2. The method now depends on engineering treatment which expensive, and so it is necessary to find another solution to the problem. The quantum fluid model which characterized by degenerate pressures, exchange correlation effect, and Bohm potential is constructed for a system of (electron/hole) and electron beam. Also, the soliton solution for the Kadomtsev-Petviashvili equation (KP) which derived from the reductive perturbation theory is obtained. The model had been applied to GaAs semiconductor and the numerical results showed that both the streaming and temperature of the electron beam have a significant effect on growing the solitary waves.