Physical properties of Y 2O 3:Eu luminescent films grown by MOCVD and laser ablation

Abstract

Luminescent Y 2O 3:Eu 3+ thin films were deposited on sapphire, polycrystalline Al 2O 3 and indium tin oxide coated glass or sapphire substrates by two different techniques: metallorganic chemical vapor deposition (MOCVD) and laser ablation. Microcrystalline Y 2O 3:Eu films were grown in a MOCVD chamber by decomposing and reacting yttrium and europium organometallic precursors in an oxygen atmosphere at low pressures (1–10 mTorr) and low substrate temperatures (500–700°C). The as-deposited films showed the characteristic red fluorescence spectrum of Y 2O 3:Eu with the main peak centered about 611 nm wavelength. The as-deposited films averaged 1.0 μm in particle size and 2.0 μm in thickness. Post-deposition annealing treatments in the temperature range 900–1200°C enhanced the luminescent intensity of the films. The as-deposited laser ablated oxide films were amorphous and required annealing at temperatures higher than 800°C to observe luminescence, which occurred in conjunction with crystallization. The as-deposited films averaged 500 nm in thickness and after post-annealing at 1000°C were composed of 15–200 nm grains.