Abstract
The resistivity, composition, and microstructure of sputtered titanium silicide films from a composite target were investigated as a function of substrate temperature in the range of . We find that there are essentially three distinct regimes of properties, for , , and . The oxygen incorporation, oxidation sensitivity, and resistivity of the films decrease as the substrate temperature increases. The most notable observation was that the physical properties of the films in the temperature range of 450°–600°C are similar to fully reacted titanium disilicide films formed in a furnace anneal at 900°C, and, in addition, they are oxygen free. In order to explain this result, we had to assume that the surface substrate temperature was several hundred degrees higher during sputtering than what the macroscopic measurements of the bulk substrate temperatures would indicate.
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