Abstract
The phase diagrams and the results of studies of the GaN, AlN and InN ternary solid solutions grown using the magnetron sputtering, molecular beam epitaxy, and metalorganic vapour-phase epitaxy technologies and intended for the production of ultrahigh-frequency InAlN/GaN HEMT transistors are analyzed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have