Abstract
ABSTRACT Acceptor dopants prevent the reduction of Ti4+ to Ti3+ by neutralizing the donor action of the oxygen vacancies. Bi3.6La0.4Ti3O12 thin film has a low dielectric constant and the smallest dielectric loss among La-modified bismuth titanate materials. We grew Bi4.3Ti3O12.4, Bi3.65La0.47Ti3O12.17 and Mn-doped Bi3.65La0.47Ti3O12.17 crystals. The remanent polarization of Mn-doped Bi3.65La0.47Ti3O12.17 crystal indicated a higher value, and the coercive field indicated a lower value. From the XPS results, we suggested that oxygen vacancies of Bi3.65La0.47Ti3O12.17 might be decreased with Mn doping. The band gap of the crystals was about 3.11, 3.25 and 3.2 eV for Bi4.3Ti3O12.4, Bi3.65La0.47Ti3O12.17 and Mn-doped Bi3.65La0.47Ti3O12.17 crystals, respectively.
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