Physical properties of Dy and La doped SnO2 thin films prepared by a cost effective vapour deposition technique

Abstract

AbstractStannous oxide (SnO2) thin film is one of the most widely used n‐type transparent semi‐conductor films in electronics, electro‐optics and solar energy conversion. By achieving controlled non‐stoichiometry, we can get good transparency and high electrical conductivity simultaneously in SnO2 thin films. Dy and La doped SnO2 thin films have been prepared by a cost effective vapour deposition technique. The structural, photo‐electronic, optical and electrical properties of the doped and undoped films were studied. The results of X‐ray Diffraction studies reveals the polycrystalline nature of the films with preferential orientation along the (101), (211) and (301) planes and their average grain size variation for different deposition temperature. Photoconductivity and Photovoltaic studies of the films were also performed. The optical properties of these films were studied by measuring their optical transmission as a function of wavelength. The optical transmission is found to be increased on Dy doping and decreased on La doping. The band gap, refractive index and thickness of the films were calculated from U‐V transmittance and Absorption graphs. The optical band gap of undoped film is found to be 4.08 eV, but on doping it shifts to lower energies and then increases on increasing the concentration of both dopants. Its electrical parameters such as sheet resistance, resistivity, mobility, Hall coefficient, and carrier concentration were determined by Four Probe, Van der Pauw and Hall Probe method. On doping with Dy, carrier conversion takes place from n‐type to p‐type and p‐conductivity dominates. On La doping no carrier conversion takes place but resistivity decreases. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)