Abstract
By setting down of ZnO thin films onto p-Si substrates by reactive high-frequency magnetron sputtering method at different growth temperatures and ratios of oxygen and argon partial pressures n-ZnO/p-Si heterostructures have been obtained. Adjustment of the oxygen amount during growth enables to control the physical properties of ZnO thin films as well as n-ZnO/p-Si heterojunctions. Current-voltage characteristics of these structures had distinct rectifying properties. To find out the physical processes that determine the behavior of current at forward and reverse bias the energy band diagrams of created electrical junctions have been built and analyzed.
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