Abstract
In this paper, we described a method of double-sided diffusion and drift of lithium-ions into monocrystalline silicon for the formation of the large-sized, p-i-n structured Si(Li) radiation detectors. The p-i-n structure is a p-n junction with a doped region, where the “i-region” is between the n and the p layers. A well-defined i-region is usually associated with p or n layers with high resistivities. The p-i-n structure is mostly used in diodes and in some types of semiconductor radiation detectors. The uniqueness of this method is that, in this method, the processes of diffusion and drift of lithium-ions, which are the main processes in the formation of Si(Li) p-i-n structures, are produced from both flat sides of cylindrical-shaped monocrystalline silicon, at optimal temperature (T = 420 °C) conditions of diffusion, and subsequently, with synchronous supply of temperature (from 55 to 100 °C) and reverse bias voltage (from 70 to 300 V) during drift of lithium-ions into silicon. Thus, shortening the manufacturing time of the detector and providing a more uniform distribution of lithium-ions in the crystal volume. Since, at present, the development of manufacturing of large-sized Si(Li) detectors is hindered due to difficulties in obtaining a uniformly compensated large area and time-consuming manufacturing process, the proposed method may open up new possibilities in detector manufacturing.
Highlights
There are different types [1,2,3,4] and manufacturing technologies [5,6,7] of Si(Li) pi-n detectors
For detectors with a large sensitive area, the method of p-type silicon compensation by lithium-ions remains as one of the effective methods [8,9]. This method consists of the following steps: obtaining and processing of appropriate monocrystalline silicon, diffusion of Li atoms into monocrystalline Si to the pre-determined depth, drift of Li-ions into Si and metal contact application to the obtained sample
Pell proved that if the reverse bias voltage is applied to the p-n junction with sufficient temperature to excite the donor or acceptor ions, the ions will drift in the electric field to create intrinsic regions between the p-n junctions
Summary
There are different types [1,2,3,4] and manufacturing technologies [5,6,7] of Si(Li) pi-n detectors. For detectors with a large sensitive area, the method of p-type silicon compensation by lithium-ions remains as one of the effective methods [8,9]. This method consists of the following steps: obtaining and processing of appropriate monocrystalline silicon, diffusion of Li atoms into monocrystalline Si to the pre-determined depth, drift of Li-ions into Si and metal contact application to the obtained sample. Pell’s theory was considered by Gibbon and Iredal [12], with a more precise assumption to real detecting systems They considered the accuracy of compensation for acceptor impurities in semiconductors. In 1969, Lauber [13] stated that the high quality of compensation in the inner part of the crystal mainly depends on the thermally generated electron–hole pairs that were separated by the reverse bias voltage applied during the drift
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