Abstract
Equations for effusion of material in Molecular Beam Epitaxy are presented for: 1. (a) an effusion cell with a single thin wall orifice; 2. (b) a single channel effusion cell and 3. (c) a multichannel effusion cell. Multi-component systems GaAs-AlGaAs and PbTe-PbSnTe are discussed with emphasis on the stoichiometry of the films deposited.
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