Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

Abstract

The silicon carbide bipolar junction transistor (BJT) is attractive for use in high-voltage switching applications offering high-voltage blocking characteristics, low switching losses, and is capable of operating at current densities exceeding 300A/cm2. However, performance reliability issues such as degradation of current gain and on-resistance currently prohibit commercial production of 4H–SiC BJTs. This paper examines the physical mechanisms responsible for this degradation as well as the impact that these physical phenomena have on device performance. Results were obtained through the examination of several types of N–P–N BJT structures using various fabrication methodologies. Electron-beam induced current (EBIC) and potassium hydroxide (KOH) etching were used to characterize defect content in the material, before and after device current stress, when possible. It was found that Shockley stacking faults (stress-induced structures) associated with the forward voltage drift phenomenon in SiC bipolar diodes, also play a major role in the reduction of gain and an increase of on-resistance of the BJTs. However, results from some devices suggest that additional processes at the device periphery (edge of the emitter) may also contribute to degradation in electrical performance. Hence, it is essential that the sources of electrical degradation, identified in this paper, be eliminated for SiC BJTs to be viable for commercial scale production.