Abstract
Devices made of amorphous thin films of the prototypical Mott‐insulator chromium‐doped V2O3 show a threshold and negative differential resistance effect after an electroforming step. Here, it is demonstrated that this effect is caused by the formation of a crystalline filament, in which a thermal runaway effect can occur. A compact model is developed that can describe the switching behavior as well as its inherent variability. The influence of the doping concentration and oxygen stoichiometry on the switching behavior is characterized and by fitting the model to the experimental data, the underlying physical changes are extracted.
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