Abstract
With the recent technological advances in 4H-SiC PiN diode fabrication, simulation tools which enable the accurate and rapid prediction of losses of such devices in power electronics circuits will be increasingly sought-after. To this end, a physical electro-thermal model of the 4H-SiC PiN diode has been developed, which facilitates device optimization for power circuit applications. The performance of this model has been compared with both finite element simulations and experimental results; good matching for both switching and conduction characteristics has been observed.
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