Abstract
The response mechanism of a metal insulator-SiC (MISiC) Schottky barrier diode (SBD) gas sensor is analyzed. By combining the SBD hot electron emission theory with the hydrogen adsorption and desorption theory, a physical model of the MISiC SBD gas sensor is developed by considering the barrier height modulation effect and the variation of the ideal factor with the external conditions. Using this model, the relationship between device characteristics and insulation layer thickness is analyzed, and the optimal design is carried out between sensitivity, reliability and operating current/current resolution factors.
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