Physical modeling of electron mobility enhancement for arbitrarily strained silicon

Abstract

The band structure of Silicon under arbitrary stress/strain conditions has been calculated using the empirical non-local pseudopotential method. It is shown that the change of the electron effective mass cannot be neglected for general stress conditions and how this effect together with the strain induced splitting of the conduction bands can be used to optimize the electron mobility. The effective mass change has been incorporated into our Monte Carlo simulator VMC and an existing low-field mobility model.