Abstract
Charge sensitive infrared phototransistors are well known for their capability for response spectrum tuning and single photon detection. In this paper, we established a physical model for a charge sensitive infrared phototransistor operating at \(45\,\upmu \hbox {m}\) wavelength using Crosslight Apsys software. Several key physical mechanisms involved such as inter-subband optical transition and resonant tunneling of carriers were applied and fine tuned to obtain a better simulation result. The calculated absorption spectrum and the simulated data graphs demonstrate that this cell can be used for long wavelength detection with relatively high sensitivity.
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