Abstract
Current transport in PN junctions under a forward electric field is physically modeled. The space-charge regions or the depletion regions at thermal equilibrium in both n-type and p-type sides are found to be divided into two regions: one is the depletion region; the other is the accumulation region. The proposed current equation under a forward electric field reveals that a drift velocity caused by the forward voltage is a physical origin of the ideality factor. The voltage and temperature dependent ideality factors determined by the current-voltage curve predicted by this diode current equation agree well with experimental results. Due to the electron drift velocity higher than the hole drift velocity, electron transport dominates the current transport. This current equation of PN junctions will benefit to better physically understand the current transport in semiconductor materials and devices. It is also helpful to improve their performance.
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