Abstract
A study on the physical modeling of the growth of GaAs on Ge fins is reported. Experimental data on selective growth of high-quality gallium arsenide (GaAs) on germanium (Ge) fins with different orientations formed on 10° offcut germanium-on-insulator (GeOI) substrate were used. Extensive physical characterization using secondary electron microscope (SEM) and transmission electron microscope (TEM) was performed to obtain the dependence of the GaAs growth rates on crystallographic directions. Our physical model explains the shapes of GaAs crystals grown on the Ge fins having different in-plane orientations.
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