Abstract
This paper presents the comprehensive study of strain effect on carrier mobility in ETSOI MOSFETs. We firstly demonstrate that the mobility enhancement ratio increases as SOI thickness (TSOI) decreases from 60 nm to 4 nm by applying the uniaxial <110> tensile stress parallel to the channel. On the other hand, by applying the uniaxial <110> tensile stress perpendicular to the channel, mobility enhancement ratio does not necessarily increase as TSOI decreases. We discuss this result in terms of deformation potential (Dac) and effective mass (m*).
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