Abstract
Resistive switching phenomena have been attracting much interest due to their various physical mechanisms and industrial potential as prospective candidates for next-generation non-volatile memories. Because diverse resistive switching behaviors have been observed in a wide variety of materials, various mechanisms and applications are proposed. In this paper, we appropriately categorize resistive switching behaviors based on their physical mechanisms, such as formation/rupture of conductive filament, Schottky barrier modulation, valence changing, and conductive bridging. Memristive behaviors of resistive switching materials are also addressed because they have potential for neuromorphic devices. In addition, we introduce several problems raised during materialization of cross point array of resistive switching memories and suggested solutions.
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