Abstract
A model of optically pumped NMR (OPNMR) behavior in GaAs that connects the photon energy dependence of the OPNMR signal intensity for (69)Ga with different polarizations of light has been developed. Inputs to this model include experimental conditions--external magnetic field (B(0)), temperature (T), and optical pumping parameters (tau(L), laser helicity)--as well as parameters that arise from sample-specific characteristics--electron spin lifetime (T(1e)), electron lifetime (tau(e)), electron-nuclear correlation time (tau(c)), and sample thickness (z). These various inputs affect the profile of the OPNMR signal intensity as a function of photon energy (E) in a predictable manner. Therefore, the profile can serve as a composite fingerprint by which individual parameters can be inferred when not known. Characteristics of the profile include the photon energy for maximum OPNMR signal intensity and the intensity ratio between sigma(+) and sigma(-) light.
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