Abstract
The possibility of the IR-radiation detecting in crystals of direct-gap semiconductors, caused by effects of IR-quenching of probe visible-range radiation within the region of a crystal relative transparency, is studied both theoretically and experimentally. The comparison of some mechanisms investigated allows to conclude that the most probable explanation of the IR-quenching effect, experimentally observed in the CdS crystal, is the mechanism of probe radiation absorption with photon energy “deficit” with respect to exciton resonance, which is eliminated due to exchange interaction of a free exciton in the intermediate state with spherical excitons localized on manyelectron atoms of impurity.
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