Abstract
A systematic physical failure analysis methodology can be applied to distinguish the damage induced by EOS and ESD in sub-micron silicon devices. Eventhough the electrical failure modes observed are identical, by a thorough analysis knowing the differences in failure signatures, as well as employing specific methods, it is found possible to distinguish between EOS and ESD failures to a great extent. Both field failed and simulated failed cases have been studied to establish the difference in failure signatures.
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