Abstract
The interaction of nanosecond laser pulses in the ultraviolet wavelength range and femtosecond laser pulses in the near-infrared region with the semiconductor SiC and the composite compound SiC–TiC–TiB 2 was investigated. Surface analytical techniques, such as XPS, depth profile (DP), and micro-Raman spectroscopy (μ-RS) were used to identify the chemical changes between untreated and laser-treated areas. Single-pulse irradiation led to material modifications in the condensed state in most instances. Multi-pulse results differed depending on the pulse duration. Crystal structure changes were observed as a consequence of laser-induced melting and resolidification. In air contact all components underwent oxidation reactions according to thermodynamic expectations. Exceptions were observed under exclusion of oxygen, SiC was reduced to elemental Si.
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