Abstract
Thin films of silver copper oxide were deposited on to glass and silicon substrates by RF magnetron sputtering of equimolar silver copper alloy (Ag50Cu50) target at various oxygen partial pressures in the range 5 x 10(-3)-6 x 10(-2) Pa and substrate temperatures in the range 303 to 473 K. The influence of oxygen partial pressure and substrate temperature on the core level binding energies, structure and surface morphology, and electrical and optical properties of the films were studied. The oxygen partial pressure played a prominent role on the growth of the films with different phases of silver copper oxide. X-ray photoelectron spectroscopic studies indicated the presence of characteristic core level binding energies related to the silver, copper and oxygen. The films formed at oxygen partial pressure of 2 x 10(-2) Pa and substrate temperature of 423 K were mixed phase of Ag2Cu2O3, Ag2Cu2O4 and Ag2O. Single phase Ag2Cu2O3 films with crystallite size of 28 nm were achieved at an oxygen partial pressure of 2 x 10(-2) Pa and substrate temperature of 473 K. The optical band gap of the films increased from 1.78 to 1.98 eV with increase of substrate temperature from 303 to 473 K. Single phase Ag2Cu2O3 films formed at substrate temperature of 473 K showed electrical resistivity of 2 x 10(-3) Omega cm and optical band of 1.98 eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
